CMUDM8001 TR
CMUDM8001 TR
Part Number CMUDM8001 TR
Description MOSFET P-CH 20V 0.1A SOT523
Package / Case SOT-523
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description P-Channel 20V 100mA (Ta) 250mW (Ta) Surface Mount SOT-523
To learn about the specification of CMUDM8001 TR, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add CMUDM8001 TR with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of CMUDM8001 TR.
We are offering CMUDM8001 TR for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
CMUDM8001 TR - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet CMUDM8001
Standard Package 3000
Manufacturer Central Semiconductor Corp
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Rds On (Max) @ Id, Vgs 8Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.66nC @ 4.5V
Vgs (Max) 10V
Input Capacitance (Ciss) (Max) @ Vds 45pF @ 3V
FET Feature -
Power Dissipation (Max) 250mW (Ta)
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-523
Package / Case SOT-523
CMUDM8001 TR - Related ProductsMore >>
MMSF3P02HDR2G
ON Semiconductor, P-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC,
View
PMV33UPE,215
Nexperia USA Inc., P-Channel 20V 4.4A (Ta) 490mW (Ta) Surface Mount TO-236AB,
View
SSM3J35CTC,L3F
Toshiba Semiconductor and Storage, P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C, U-MOSVII
View
NTS4173PT1G
ON Semiconductor, P-Channel 30V 1.2A (Ta) 290mW (Ta) Surface Mount SC-70-3 (SOT323),
View
IRLML6401TRPBF
Infineon Technologies, P-Channel 12V 4.3A (Ta) 1.3W (Ta) Surface Mount Micro3™/SOT-23, HEXFET®
View
SSM3J132TU,LF
Toshiba Semiconductor and Storage, P-Channel 12V 5.4A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSVI
View
DMP2018LFK-7
Diodes Incorporated, P-Channel 20V 9.2A (Ta) 1W (Ta) Surface Mount U-DFN2523-6,
View
IXTH48P20P
IXYS, P-Channel 200V 48A (Tc) 462W (Tc) Through Hole TO-247 (IXTH), PolarP™
View
SISH617DN-T1-GE3
Vishay Siliconix, P-Channel 30V 13.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH, TrenchFET®
View
RRR015P03TL
Rohm Semiconductor, P-Channel 30V 1.5A (Ta) 540mW (Ta) Surface Mount TSMT3,
View
SI7463DP-T1-GE3
Vishay Siliconix, P-Channel 40V 11A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SSM3J327R,LF
Toshiba Semiconductor and Storage, P-Channel 20V 3.9A (Ta) 1W (Ta) Surface Mount SOT-23F, U-MOSVI
View
CMUDM8001 TR - Tags